Taiwan Semiconductor http://www.taiwansemi.com/en Taiwan Semiconductor Global Official Website Mon, 13 Jan 2025 02:41:08 +0000 en-US hourly 1 https://wordpress.org/?v=6.7.1 http://www.taiwansemi.com/en/wp-content/uploads/2023/06/favicon01-150x150.png Taiwan Semiconductor http://www.taiwansemi.com/en 32 32 600V FRED Product Extension Offers Different Switching Speeds in ThinDPAK Package http://www.taiwansemi.com/en/600v-fred-product-extension-offers-different-switching-speeds-in-thindpak-package/?utm_source=rss&utm_medium=rss&utm_campaign=600v-fred-product-extension-offers-different-switching-speeds-in-thindpak-package http://www.taiwansemi.com/en/600v-fred-product-extension-offers-different-switching-speeds-in-thindpak-package/#respond Fri, 10 Jan 2025 05:14:40 +0000 https://web.ts.com.tw/en/?p=17335 Taiwan Semiconductor (TSC), a global supplier of discrete power electronics devices, LED drivers, analog ICs and ESD protection devices, announces an additional 600V Ultra fast – high efficiency rectifier for power electronics systems. The current ranges are from 6A~15A within the ThinDPAK package. Switching speeds of either (trr<25ns) or (trr<60ns) can be selected for different …

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Taiwan Semiconductor (TSC), a global supplier of discrete power electronics devices, LED drivers, analog ICs and ESD protection devices, announces an additional 600V Ultra fast – high efficiency rectifier for power electronics systems.
The current ranges are from 6A~15A within the ThinDPAK package. Switching speeds of either (trr<25ns) or (trr<60ns) can be selected for different applications to achieve the power efficiency needed. ThinDPAK package is footprint compatible with standard D-PAK offering a low profile with lower thermal resistance providing a drop in upgrade path for existing applications. TSC provides SPICE, thermal and 3D CAD models on our website to support fast simulation.

Key Features

  • Planar technology -fast switching <25ns
  • Low power loss – high efficiency
  • Drop in upgrade for DPAK packages
  • Low profile – 1.3mm
  • Low leakage current < 1ma
  • Meets JESD 201 class 2 whisker testing
  • MSL level 1 for ease of manufacturing
  • TJ Max. 175℃ for high reliability  

Applications

  • DC to DC converters -rectification
  • Switch mode power converters – inverters
  • Snubber – clamping
  • PFC boost applications
  • Freewheeling diode
  • Motor Drives
  • UPS and Inverters

Product Portfolio

Part NumberPackageVRRM (V)IF (A)VF Max. (V)trr Max.(ns)IFSM (A)TJ Max (°C)
PUAD6JHThinDPAK60061.72585175
PUAD8JHThinDPAK60081.725100175
PSAD15JHThinDPAK600151.535240175
PHAD6JHThinDPAK60061.360100175
PHAD8JHThinDPAK60081.360105175
PHAD10JHThinDPAK600101.360120175
PHAD12JHThinDPAK600121.360220175
PUAD6JThinDPAK60061.72585175
PUAD8JThinDPAK60081.725100175
PSAD15JThinDPAK600151.535240175
PHAD6JThinDPAK60061.360100175
PHAD8JThinDPAK60081.360105175
PHAD10JThinDPAK600101.360120175
PHAD12JThinDPAK600121.360220175

“H” means AEC-Q101 qualified

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600V FRED Extend to Automotive Application within Surfaced Mounted Packages http://www.taiwansemi.com/en/600v-fred-extend-to-automotive-application-within-surfaced-mounted-packages/?utm_source=rss&utm_medium=rss&utm_campaign=600v-fred-extend-to-automotive-application-within-surfaced-mounted-packages http://www.taiwansemi.com/en/600v-fred-extend-to-automotive-application-within-surfaced-mounted-packages/#respond Thu, 26 Dec 2024 01:00:36 +0000 https://web.ts.com.tw/en/?p=17244 Taiwan Semiconductor  (TSC), a global supplier of discrete power electronics devices, LED drivers, analog ICs and ESD protection devices, announces an additional 600V Ultra fast diode for various power systems. The current ranges are from 1A~12A with multiple SMD packages such as SOD-123W, SOD-123HE, SOD-128, SMA, SMB, SMC and SMPC4.6U. The speedy switching with low …

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Taiwan Semiconductor  (TSC), a global supplier of discrete power electronics devices, LED drivers, analog ICs and ESD protection devices, announces an additional 600V Ultra fast diode for various power systems.

The current ranges are from 1A~12A with multiple SMD packages such as SOD-123W, SOD-123HE, SOD-128, SMA, SMB, SMC and SMPC4.6U. The speedy switching with low Vf can reduce switching and conduction loss both to achieve the power efficiency maximized. TSC provides SPICE model and thermal model on the website also to support customer’s simulation. Applications in automotive HV power electronics like OBC, traction inverter, and more.

Key Features

  • AEC-Q101 qualified
  • Planar technology
  • Low power loss, high efficiency
  • Low leakage current
  • Environmental compliance
  • Halogen-free according to IEC 61249-2-21
  • TJ Max. 175℃ 

Applications

  • DC to DC converter
  • Switching mode converters and inverters
  • Snubber – clamping
  • PFC application
  • Freewheeling

Product Portfolio

Part NumberPackageVRRM (V)IF (A)VF Max. (V)trr Max.(ns)IFSM (A)TJ Max (°C)
PU1JLWHSOD-123W60011.52520175
PU2JLWHSOD-123W60021.52535175
PU1JLSHSOD-123HE60011.52520175
PU2JLSHSOD-123HE60021.52535175
PU1JFSHSOD-12860011.52520175
PU2JFSHSOD-12860021.52535175
PU3JFSHSOD-12860031.52545175
PU1JAHSMA60011.52520175
PU2JAHSMA60021.52535175
PU3JAHSMA60031.52545175
PU2JBHSMB60021.52535175
PU3JBHSMB60031.52545175
PU6JBHSMB60061.72575175
PU3JCHSMC60031.52545175
PU6JCHSMC60061.72575175
PU8JCHSMC60081.725100175
PUUP3JHSMPC4.6U60031.52555175
PUUP6JHSMPC4.6U60061.72585175
PUUP8JHSMPC4.6U60081.725100175
PUUP10JHSMPC4.6U600101.825115175
PUUP12JHSMPC4.6U600121.925160175
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TSC wins Silver Award for Sustainability Reporting at 2024 Taiwan Corporate Sustainability Awards http://www.taiwansemi.com/en/tsc-wins-silver-award-for-sustainability-reporting-at-2024-taiwan-corporate-sustainability-awards/?utm_source=rss&utm_medium=rss&utm_campaign=tsc-wins-silver-award-for-sustainability-reporting-at-2024-taiwan-corporate-sustainability-awards http://www.taiwansemi.com/en/tsc-wins-silver-award-for-sustainability-reporting-at-2024-taiwan-corporate-sustainability-awards/#respond Thu, 12 Dec 2024 02:26:40 +0000 https://web.ts.com.tw/en/?p=17138 Taiwan Semiconductor Co., Ltd. (5425) has been recognized for its commitment to sustainable development and robust Environmental, Social, and Governance (ESG) disclosures. The company’s second corporate sustainability report, published this year, adheres to internationally recognized standards, including the Global Reporting Initiative (GRI), Task Force on Climate-related Financial Disclosures (TCFD), and Sustainability Accounting Standards Board (SASB) …

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Taiwan Semiconductor Co., Ltd. (5425) has been recognized for its commitment to sustainable development and robust Environmental, Social, and Governance (ESG) disclosures. The company’s second corporate sustainability report, published this year, adheres to internationally recognized standards, including the Global Reporting Initiative (GRI), Task Force on Climate-related Financial Disclosures (TCFD), and Sustainability Accounting Standards Board (SASB) guidelines for the semiconductor industry. On December 11, TSC was awarded the “Silver Award for Sustainability Reporting in Category 1 – Electronics and Information Manufacturing” at the 17th Taiwan Corporate Sustainability Awards (TCSA), showcasing its excellence in sustainable corporate practices. 

The TCSA, organized by the Taiwan Institute for Sustainable Energy (TAISE) since 2008, is Taiwan’s most prestigious sustainability award. Known as the “Oscars of Sustainability” in Taiwan, the awards highlight outstanding achievements in sustainable development, ESG investments, and alignment with the United Nations’ 17 Sustainable Development Goals (SDGs). This year, a record 882 companies participated in the competition. 

In 2023, TSC expanded the scope of its reporting and enhanced the quality and accuracy of the reporting data to meet global sustainability and climate-related disclosure standards. This dedication was rewarded with a Silver Award in its first-ever participation in the TCSA for sustainability reporting, underscoring the report’s excellence in communication, comprehensiveness, and credibility. 

Looking forward, TSC committed to aligning with international trends by integrating sustainable development strategies into its core business. The company actively supports the United Nations’ SDGs, ensuring transparency in its sustainability journey and achievements. TSC will continue engaging with stakeholders to foster collaboration and create a shared vision for a sustainable future.

Inquiries

Contact: Cindy Hsieh
Unit: PR Department
Tel: +886 2 8913-1588 Ext. 1603

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2023 TSC Sustainability Report (EN)
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electronica in Munich 2024 http://www.taiwansemi.com/en/electronica-munich-2024/?utm_source=rss&utm_medium=rss&utm_campaign=electronica-munich-2024 http://www.taiwansemi.com/en/electronica-munich-2024/#respond Wed, 11 Dec 2024 01:53:57 +0000 https://web.ts.com.tw/en/?p=17126 This year in electronica 2024, Taiwan Semiconductor introduced an extended series of products across our portfolio, including rectifiers, diodes, protection devices, and MOSFETs, reflecting our commitment to meeting diverse customer needs. Beyond our robust product offerings, we remain dedicated to delivering top-tier quality, exceptional service, and the flexibility needed to help our customers navigate the …

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This year in electronica 2024, Taiwan Semiconductor introduced an extended series of products across our portfolio, including rectifiers, diodes, protection devices, and MOSFETs, reflecting our commitment to meeting diverse customer needs. Beyond our robust product offerings, we remain dedicated to delivering top-tier quality, exceptional service, and the flexibility needed to help our customers navigate the fast-changing and competitive industry landscape. Thank you for visiting us at electronica 2024. We look forward to shaping a brighter future together through continued innovation and are excited to share what’s next from Taiwan Semiconductor.

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APEC 2025 http://www.taiwansemi.com/en/apec-2025/?utm_source=rss&utm_medium=rss&utm_campaign=apec-2025 http://www.taiwansemi.com/en/apec-2025/#respond Wed, 04 Dec 2024 03:26:07 +0000 https://web.ts.com.tw/en/?p=17067 Taiwan Semiconductor Set to Shine at APEC 2025 in Atlanta, GA Taiwan Semiconductor is thrilled to announce its participation in the upcoming Applied Power Electronics Conference and Exposition (APEC) 2025, taking place from March 16–20, 2025, in Atlanta, Georgia. As a proud participant in this esteemed conference, Taiwan Semiconductor is excited to unveil its latest …

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Taiwan Semiconductor Set to Shine at APEC 2025 in Atlanta, GA

Taiwan Semiconductor is thrilled to announce its participation in the upcoming Applied Power Electronics Conference and Exposition (APEC) 2025, taking place from March 16–20, 2025, in Atlanta, Georgia.

As a proud participant in this esteemed conference, Taiwan Semiconductor is excited to unveil its latest innovations, including new low-clamp TVS devices, advanced MOSFETs, and other cutting-edge solutions designed to power a wide range of applications.

Visit us at Booth #644 to explore our innovative technologies and engage in meaningful discussions with our team of experts. We look forward to connecting with you at APEC 2025!

To secure your spot, register now at Conference Registration.

For media inquiries, please contact: sales@tscus.com

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1200V High Efficiency Rectifier Extends High Voltage to Automotive Surface Mounted Package http://www.taiwansemi.com/en/1200v-high-efficiency-rectifier-extends-high-voltage-to-automotive-surface-mounted-package/?utm_source=rss&utm_medium=rss&utm_campaign=1200v-high-efficiency-rectifier-extends-high-voltage-to-automotive-surface-mounted-package http://www.taiwansemi.com/en/1200v-high-efficiency-rectifier-extends-high-voltage-to-automotive-surface-mounted-package/#respond Tue, 05 Nov 2024 06:08:30 +0000 https://web.ts.com.tw/en/?p=16958 Taiwan Semiconductor,  (TSC), a global supplier of discrete power electronics devices, LED drivers, analog ICs and ESD protection devices, announces additional 1200V High Efficiency rectifiers in industry standard packages. The parts are targeted for bootstrap and de-saturate applications for IGBT or MOSFET gate drivers in high voltage battery systems of EVs.  Additional applications include alternative …

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Taiwan Semiconductor,  (TSC), a global supplier of discrete power electronics devices, LED drivers, analog ICs and ESD protection devices, announces additional 1200V High Efficiency rectifiers in industry standard packages.

The parts are targeted for bootstrap and de-saturate applications for IGBT or MOSFET gate drivers in high voltage battery systems of EVs.  Additional applications include alternative energy systems, metering, lighting and rectification in HV power systems.

Key Features

  • Low CJ
  • Fast trr -75ns max
  • Environmental compliance
  • TJ 175℃ max.
  • Industry standard packages

Applications

  • Bootstrapping
  • De-saturate
  • Snubber – clamping
  • Freewheeling
  • HV rectification
  • Protection – HV blocking diode

Product Portfolio

Part NumberPackageVRRM (V)IF (A)VF Max. (V)trr Max.(ns)IFSM (A)TJ Max (°C)
HS1QSMA120011.97535175
HS1QHSMA120011.97535175
HS1QBSMB120011.97535175
HS1QBHSMB120011.97535175

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2024 electronica http://www.taiwansemi.com/en/2024-electronica-munich/?utm_source=rss&utm_medium=rss&utm_campaign=2024-electronica-munich http://www.taiwansemi.com/en/2024-electronica-munich/#respond Mon, 21 Oct 2024 08:00:54 +0000 https://web.ts.com.tw/en/?p=16882 Taiwan Semiconductor at Electronica 2024 Taiwan Semiconductor is thrilled to be part of Electronica 2024, one of the premier events in the electronics industry. Join us from November 12nd to 15th, 2024 in Munich Germany, where professionals across the industry will gather to network, exchange insights, and explore cutting-edge innovations. Visit our booth at Hall C3. Booth 330 to discover how …

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Taiwan Semiconductor at Electronica 2024

Taiwan Semiconductor is thrilled to be part of Electronica 2024, one of the premier events in the electronics industry. Join us from November 12nd to 15th, 2024 in Munich Germany, where professionals across the industry will gather to network, exchange insights, and explore cutting-edge innovations.

Visit our booth at Hall C3. Booth 330 to discover how Taiwan Semiconductor can help power your next electronic project. We look forward to connecting with you!

For media inquiries, please contact: munich@tsceu.com

Event highlights

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IGBT, MOSFET and GaN: An Overview of Efficiency, Power and System Cost for Inverter Design http://www.taiwansemi.com/en/blog-igbt-mosfet-gan/?utm_source=rss&utm_medium=rss&utm_campaign=blog-igbt-mosfet-gan http://www.taiwansemi.com/en/blog-igbt-mosfet-gan/#respond Mon, 14 Oct 2024 08:12:56 +0000 https://web.ts.com.tw/en/?p=16778 Extending from a simple Low Power home appliance to complex and intricate application for Electric Vehicles (EVs), Power Conversion has always been the recurring chapter when it comes to System Design. The designers have always been tasked to engineer the solution which revolves around better efficiency, high delivered power and reduced system cost. From DC/DC …

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Extending from a simple Low Power home appliance to complex and intricate application for Electric Vehicles (EVs), Power Conversion has always been the recurring chapter when it comes to System Design. The designers have always been tasked to engineer the solution which revolves around better efficiency, high delivered power and reduced system cost. From DC/DC Converters- Buck or Boost to DC/AC Inverters these parameters play an important role in defining the selection of discrete components for the design.

Inverters have been the part of power conversion in system design since the 1950s, however, their use in power applications have grown exponentially from 1980 and onwards with the main function of converting Direct Current (DC) electricity to Alternating Current (AC) electricity. Inverters were primarily tasked with controlling the rotational speed of the motor but as the industrial sector grew, their use became essential for industrial infrastructure. Over time their requirement continues to expand in the automotive and industrial sectors at an exponential pace.

To understand the inverter and the role of IGBT, MOSFET and GaN, let’s dive in to the basic design of a H-Bridge based single-phase inverter.

As depicted in the block diagram, IGBTs, MOSFETs or GaNs are mainly employed as a “Switching Component” and considered a basic building block of the inverter. A PWM or SPWM based input signal is generated using a Microcontroller which controls ON/OFF state of IGBTs/MOSFETs/GaNs.

When it comes to defining the right component for the design, there are key parameters that needs to be analyzed. Two major design specifications which would come into play are Peak Power and Switching Frequency. As a general rule, the higher the Peak Power, the lower would be the Maximum Switching Frequency of the circuit.

For example, have a look at the graph below. IGBTs provide highest peak power but on the other hand the designer is restricted to lower maximum switching frequency as compared to MOSFETs and GaN.

Figure 1: Power and Frequency Overview Taken from ElectronicDesign.Com

There are numerous applications in which IGBTs have found their potential use (High Voltage and High Current applications) since the designed Peak Power Requirements are exceeding 250kW. For example, High Power Inverter for Centrifuge in Industrial Sector, Motor Control of a Wind Tunnel for Aerodynamic Applications, and Motor Drive Control System in Automotive Sector. In applications where Peak Power requirement is higher, IGBTs would be the perfect choice.

The next design requirement which defines the selection of a device is Switching Frequency. To make a better comparison between the selection of IGBTs, MOSFETs and GaN in an inverter, let’s assume a design requirement of peak power up to 10kW-20kW (Mid-Range Inverter). This region of Peak Power is an overlapping area between IGBTs, MOSFETs and GaN, since all of these devices are capable to handle this power.

After defining the power requirements, the designer then selects the switching frequency of the application which would then determine the selection of the component. The question now arises which Switching Frequency should be opted? To answer this question better, let’s have a look at some of the key design parameters that are impacted by Switching Frequency.

a. Power Losses- Switching Losses
One of the key concerns that a designer has to deal with is to reduce the power losses and switching losses in high-efficiency applications. Switching losses are directly proportional to switching frequency i.e. Higher the frequency, higher would be the losses associated with it.

The factor that contributes to overall power dissipation is the extra “Internal (On) Resistance” the circuit has to face. This Internal (On) Resistance of the switching component is known as On Resistance (RdsOn). The higher the RdsOn, the higher would be the power dissipated. Usually, the devices having higher RdsOn have lower current ratings (IdMax) if the Drain to Source Voltage is kept constant (devices having similar Voltage Ratings in the same package)

b. Harmonics
Losses that occur due to harmonics have also a major impact on the efficiency of the system. Harmonics are usually the multiple of the fundamental switching frequency that are generated due to non-linear switching components. The effect of these distortions can cause major damage to the components hence decreasing components’ life (premature aging). However, the amplitude of these harmonics is inversely associated with the switching frequency. The higher the switching frequency, the lower would be the effect of Harmonics.

The applications like Solar Inverters and Traction Inverters where it is vital to have lower losses and increased efficiency it is better to use the component that has lower Internal (On) Resistance (RdsOn) and supports higher switching frequency. In this case, GaN would be a better fit. MOSFET or Silicon Carbide MOSFET would take the second place since MOSFETs can handle higher switching frequencies as compared to IGBTs.

Let’s have a look at some of the other key parameters that can influence the selection of a switching component based on the design requirements.

Power Density and Thermal Stability
GaN devices have better numbers of power density as compared to IGBTs and MOSFETs. They are capable of delivering more power and fewer losses while being in a compact package which enables designers to make more compact Printed Circuit Boards (PCBs) for Inverters.

The key factors that contribute to thermal performance are Internal (On) Resistance (RdsOn), Gate Charge (Qg) and Junction-Gate Capacitance. The overall power dissipation caused by these parameters is directly linked to the thermal behaviour (Heat Dissipation) of the device. The higher the values, more would be the dissipated power which would contribute to higher temperatures. From the experiments and available literature, it has now been established that GaN devices offer approximately 80% less power losses as compared to IGBTs and MOSFETs while providing approximately two times the power density in the same form factor.

Efficiency and Figure of Merit:
As discussed above, there are some inverter applications in which Efficiency is considered the “most important” parameter. Since it is the ratio of the delivered power to the input power, all the effort is put in to maximizing the output to achieve better efficiency in such inverter applications.

While designing an efficient inverter, some internal parameters like Internal (On) Resistance (RdsOn) and Gate Charge should also be kept in mind. These two parameters are used for the calculation of FOM (Figure of Merit), which directly influences the overall efficiency of the design. The Better the FOM, better would be the efficiency.

FOM = On Resistance (RdsOn) x Gate Charge (Qg)

In the same Voltage range, GaN and MOSFETs provide better FOM as compared to IGBTs.

BOM Cost:
There are various technical features that add to the BOM cost of the application.

  • Complex Cooling
    Due to high Internal (On) Resistance, heating can be a major issue in Inverters which contributes to thermal instability. To counter this problem heat sinks additional cooling is employed in mid-range to high power Inverters to ventilate extra heat, contributing to an additional BOM cost. Generally, Cooling requirements are quite low in GaN devices since they do not tend to overheat because of high electron mobility, thermal stability and efficiency.
  • Output Filters and Magnetic Components
    Filters are used to stabilize the output and block certain frequencies of the inverter. They are designed using magnetic components (Capacitors and Inductors) and employed to reconstruct the PWM and SPWM signals at the Inverter Output. For higher frequencies small output filters (Small Values of Inductances and Capacitances) are required as compared to low frequencies. This would also affect the size of the PCB and add to the BOM Cost.

    With GaN devices small output filters are required to stabilize the output (since they are used in high-frequency applications). In the case of IGBTs (lower frequencies), powerful output filters with higher specifications are required which add to the BOM cost.

  • Efficiency of the other Components
    In high-power systems, the distortions caused by harmonics and overheating generated in the circuit can cause pre-mature aging of the components. The overall efficiency of the component will decrease over time making it unsuitable for application use and hence needs replacement in the long run. Replacing a failed component takes time, effort and additional BOM Cost.

The qualitative overview of IGBTs, MOSFETs or GaN in inverter applications is shown in the matrix below. This comprehensive overview of strengths and weaknesses can help to identify application-specific performance parameters when considering them in a design.

IGBTs, MOSFETs and GaNs have their advantages and disadvantages. In short, no switching device could be deemed as “the best” solution for every application. As discussed, High Current applications would find IGBTs as a perfect fit, however when there is a mid-range (10kW and above) power requirement, MOSFETs and GaNs would be a better choice for their reduced power losses. It is always a compromise between Peak Power, Switching Frequency, Efficiency and BOM Cost which a designer has to evaluate and find the most reliable solution for the target application.

 

Author’s Profile

 Salman Talat 

Taiwan Semiconductor
Senior Field Application Engineer

salman.talat@tsceu.com

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TSC Releases 2023 Sustainability Report http://www.taiwansemi.com/en/publication-of-2023-sustainability-report/?utm_source=rss&utm_medium=rss&utm_campaign=publication-of-2023-sustainability-report http://www.taiwansemi.com/en/publication-of-2023-sustainability-report/#respond Tue, 01 Oct 2024 08:00:56 +0000 https://web.ts.com.tw/en/?p=16541 Taiwan Semiconductor Co., Ltd. has released its latest 2023 ESG Report, presenting sustainability-related information with a rigorous approach. The Company continues to expand the scope of the report and improve the quality of data and various metrics to fully address sustainability and climate-related disclosure standards. The TSC 2023 ESG Report references the Global Reporting Initiative …

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Taiwan Semiconductor Co., Ltd. has released its latest 2023 ESG Report, presenting sustainability-related information with a rigorous approach. The Company continues to expand the scope of the report and improve the quality of data and various metrics to fully address sustainability and climate-related disclosure standards.

The TSC 2023 ESG Report references the Global Reporting Initiative (GRI) Standards 2021 edition, the Task Force on Climate-related Financial Disclosures (TCFD) framework, and the Sustainability Accounting Standards Board (SASB) Semiconductors Sustainability Accounting Standard 2023. It is also compiled in accordance with the Practical Guidelines for Sustainable Development of Listed Companies and Over-the-Counter Companies. The report has been entrusted to KPMG Taiwan, which conducted a limited assurance review based on the Assurance No. 3000 standard issued by the Accounting Research and Development Foundation of the Republic of China (ROC), which in turn refers to the International Standard on Assurance Engagements (ISAE 3000).  In 2023, TSC further enhanced the scope of non-financial information in the report, incorporating the Shandong and Tianjin factories to gradually improve the depth and breadth of the report, actively communicating with stakeholders. The 2023 ESG Report features a special section, ” TSC’s 45th Anniversary,” showcasing the company’s 45-year journey and outlook for sustainable corporate development.

In the area of sustainability governance, TSC actively participates in corporate governance evaluations and follows the Corporate Governance 3.0 Sustainable Development Blueprint set by the regulatory authorities to promote various projects. In 2023, TSC continued to achieve its product development goals, establishing new R&D bases and introducing more project talent and technology. Regarding the issue of net-zero transformation, TSC pushed forward various energy-saving projects, expanded the scope of greenhouse gas inventory, and gradually developed energy transition plans. Meanwhile, TSC also demonstrated its social efforts, including employee relations, health promotion, industry-academia collaboration, and social welfare activities.

As TSC celebrates its 45th anniversary and prepares for its next phase of growth, it remains committed to aligning with international trends as part of the global semiconductor supply chain. TSC will continue to integrate sustainable development strategies with its core business, actively implement the United Nations Sustainable Development Goals (SDGs), and share its sustainability journey and achievements with stakeholders transparently, working together to achieve the next stage of its vision.

Inquiries

Contact: Hsieh Hsin-Yu, Executive Secretary
Unit: ESG Office 
Tel: +886 2 8913-1588 Ext. 1603
Email: ESG@ts.com.tw

TitleFile
2023 TSC Sustainability Report (EN)
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Power Components for On-Board Chargers (OBC): A Comprehensive Overview http://www.taiwansemi.com/en/blog-obc/?utm_source=rss&utm_medium=rss&utm_campaign=blog-obc http://www.taiwansemi.com/en/blog-obc/#respond Tue, 24 Sep 2024 02:07:55 +0000 https://web.ts.com.tw/en/?p=16384 Introduction The electric vehicle (EV) market is experiencing rapid growth, providing a more environmentally friendly mode of transportation. While traditional vehicles require gasoline from gas stations, EVs simply need to be plugged into a charging station to recharge their batteries. The on-board charger (OBC) is a critical component installed in EVs. It converts external AC …

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Introduction

The electric vehicle (EV) market is experiencing rapid growth, providing a more environmentally friendly mode of transportation. While traditional vehicles require gasoline from gas stations, EVs simply need to be plugged into a charging station to recharge their batteries.

The on-board charger (OBC) is a critical component installed in EVs. It converts external AC power from the charging station into DC power (output voltage varies based on the EV’s battery specifications) to charge the battery. If the charging station provides DC power, this conversion step is bypassed, and the DC power is directly connected to the vehicle battery.

Diagram of Electric Vehicle Charging

On-Board Charger (OBC)

The OBC is capable of regulating the charging current and voltage for EV charging. It consists of a power factor correction (PFC) circuit, a DC-DC converter, an auxiliary power supply, and a control/drive circuit. To ensure vehicle safety and reliability, its components must withstand overload, transient voltage, and high temperature conditions.

The OBC provides high voltage to the lithium battery by regulating single-phase AC 110/220V or three-phase AC 400V through PFC and DC/DC. Depending on the charging power, the range is from single-phase 3.6kW to three-phase 22kW.

OBC Circuit Diagram

Taiwan Semiconductor provides the OBC with power components such as a bridge rectifier, ultra-fast recovery rectifier, Schottky diode, and MOSFET.

AC/DC PFC (Interleaved Power Factor Corrector) PFC is a circuit that improves the power factor at the power supply end. When the phase of the input voltage and current is inconsistent, power is lost during power transmission. PFC acts as a voltage-current regulator, ensuring that the input AC current and input AC voltage reach the same phase, thus using energy more efficiently.

ACDC PFC diagram

After the adjusted current passes through Q1 and Q2 (MOSFET) in the following figure, it can drive the gate driver to operate.

ACDC PFC circuit diagram

Isolation Gate Drive The isolation gate driver can be used for high-voltage PFC and DC-DC converters. Its isolation feature supports driving larger drives, providing a safety gate and integrated protection functions. MOSFET, a common switching component, offers the advantage of fast switching speed. When current flows through, the isolation gate driver connects diodes (D1 to D7 in the following figure) to adjust the switching state of the MOSFET (Q1 to Q6). Using MOSFETs as switches can reduce losses and provide isolation to protect low-voltage circuits, ensuring safety and noise immunity.

Isolation Gate Drive circuit diagram

Silicon Carbide (SiC) Diode/MOSFET In power electronics, a significant portion of the overall power loss comes from switching during the on-off state. Each switching process causes losses, so when selecting components, shorter switching transition times are preferred to minimize losses. General diodes have a larger reverse recovery current, while SiC has the advantages of low reverse recovery current and short reverse recovery time, which can minimize related energy losses and improve power efficiency. SiC MOSFET and SiC Schottky diode are switching devices that provide a better solution for on-board chargers.

SiC material has high breakdown voltage characteristics

Power loss

Integrated OBC+DC/DC OBC integrated with DC/DC is called an integrated DC power module and bidirectional on-board charger. The DC/DC can step down the high input voltage to the vehicle battery voltage. Integrated OBC+DC/DC shares power switches and control units, reducing the number of switches, magnetic components, and energy consumption in the power circuit, thereby improving power density, increasing stability, and reducing cost, weight, and size. Through miniaturized battery modules, it helps to reduce the size and weight of electric vehicles and can accommodate higher battery capacities to extend driving range.

Integrated OBC+DCDC

Bidirectional On-Board Charger With the growing demand for electric vehicles, automotive components are constantly evolving to improve system efficiency. Traditional unidirectional on-board charging (grid to battery) has also evolved into bidirectional on-board charging (battery to load/grid), making full use of the space in electric vehicles and reducing weight. Bidirectional OBC can supply power to electronic devices inside and outside the vehicle. For example, when camping outdoors and wanting to watch a movie, you can connect the plug to the OBC as a power source, or even charge your phone and Bluetooth speaker.

Bidirectional On-Board Charger
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