Product News - Taiwan Semiconductor

1200V High Efficiency Rectifier Extends High Voltage to Automotive Surface Mounted Package

claire.chen — Tue, 05 Nov 2024 06:12:39 +0000

Taiwan Semiconductor, (TSC), a global supplier of discrete power electronics devices, LED drivers, analog ICs and ESD protection devices, announces additional 1200V High Efficiency rectifiers in industry standard packages.

The parts are targeted for bootstrap and de-saturate applications for IGBT or MOSFET gate drivers in high voltage battery systems of EVs. Additional applications include alternative energy systems, metering, lighting and rectification in HV power systems.

Key Features

Low C_J
Fast t_rr -75ns max
Environmental compliance
T_J 175℃ max.
Industry standard packages

Applications

Bootstrapping
De-saturate
Snubber – clamping
Freewheeling
HV rectification
Protection – HV blocking diode

Product Portfolio

Part Number	Package	V_RRM (V)	I_F (A)	V_F Max. (V)	t_rr Max.(ns)	I_FSM (A)	T_J Max (°C)
HS1Q	SMA	1200	1	1.9	75	35	175
HS1QH	SMA	1200	1	1.9	75	35	175
HS1QB	SMB	1200	1	1.9	75	35	175
HS1QBH	SMB	1200	1	1.9	75	35	175

The post 1200V High Efficiency Rectifier Extends High Voltage to Automotive Surface Mounted Package first appeared on Taiwan Semiconductor.

4th Generation 600V Super Junction MOSFETs

claire.chen — Mon, 03 Jun 2024 06:27:21 +0000

Taiwan Semiconductor introduces the 4^th generation 600V NE series super junction MOSFETs which are designed to improve efficiency and power density in high voltage applications. The latest technology of the NE super junction MOSFET enables exceptionally low on-state resistance (Ron) and low gate charge capacitance (Qg). The achievement of 30% FOM (figure-of-merit; Ron * Qg) improvement results in higher value in many HV applications vs alternative options.

Key Features

4^th Generation Super Junction technology
Low gate charge capacitance
Excellent switching performance
High gate noise immunity

Applications

Off-line switching power conversion
Server power supplies
HV motor drivers
UPS systems
Lighting controls

Product Portfolio

Part Number	Package	BV_DSS (V)	R_DS(ON) max (mΩ)	ID (A)	V_GS(TH) (V)	T_J max (°C)
TSM60NE069CIT	ITO-220TL	600	69	26	4 ~ 6	150
TSM60NE084CIT		600	84	22	4 ~ 6	150
TSM60NE110CIT		600	110	19	4 ~ 6	150
TSM60NE145CIT		600	145	14	4 ~ 6	150
TSM60NE180CIT		600	180	13	4 ~ 6	150
TSM60NE200CIT		600	200	12	4 ~ 6	150
TSM60NE285CIT		600	285	7.1	4 ~ 6	150
TSM60NE048PW	TO-247-3L	600	48	64	4 ~ 6	150
TSM60NE069PW		600	69	46	4 ~ 6	150
TSM60NE084PW		600	84	41	4 ~ 6	150
TSM60NE285CH	TO-251	600	285	11	4 ~ 6	150
TSM60NE285CP	TO-252	600	285	11	4 ~ 6	150

News	Newsletter_9_2024_4th Generation 600V Super Junction MOSFETs

The post 4th Generation 600V Super Junction MOSFETs first appeared on Taiwan Semiconductor.

Bi-directional ESD Protection Diode

claire.chen — Thu, 16 May 2024 03:53:03 +0000

TESDL24VB17P1Q1 is a unique design with proprietary clamping cells in a small package. The DFN1006 package size is 1.0 mm x 0.6 mm and the thickness is only 0.5 mm, which can meet the needs of new products for small packages. During transient conditions, the proprietary clamping cells prevent over-voltage on the control/data/power lines, protecting any downstream components.

Applications

Battery contacts
Power management system
Portable devices
Digital cameras
Digital frames
Cellular handsets and accessories
Notebooks, desktops and servers
Microprocessor-based equipment

Application diagram

Product Portfolio

Part Number	V_WM	C_J max	ESD robustness (IEC61000-4-2)	IPPM (at tp= 8/20μs)
TESDL24VB17P1Q1	24V	30pF	30KV	5A

News	Newsletter_8_2024_Bi-directional ESD Protection Diode

The post Bi-directional ESD Protection Diode first appeared on Taiwan Semiconductor.

Wide-bandgap SiC 650V Schottky Barrier Diodes Improve Efficiency in High-Power Systems

claire.chen — Wed, 15 May 2024 07:59:03 +0000

This family of 650V silicon carbide Schottky barrier diode is suitable for high-efficiency AC-DC, DC-DC and DC-AC conversion applications. Unlike silicon-based fast-recovery rectifiers, these SiC devices have negligible switching losses due to low capacitive charge (QC). This makes them suitable for high-speed switching applications, benefitting circuit designs with increased power density and can reduce overall solution size.

Key Features

Max. junction temperature 175°C
High-speed switching
High frequency operation
Positive temperature coefficient on V_F
SPICE Models available
Thermal Models available

Applications

AD-DC conversion – PFC Boost
DC-DC, Solar inverters
Data center and server power
Telecom – Datacom power
UPS systems

Circuit Functions

PFC boost diode
Free-wheeling diode
Full wave bridge
Vienna bridgeless circuit

Product Portfolio

Part Number	Package	V_RRM (V)	I_F (A)	V_F @ T_A= 25°C		I_R @T_A= 25°C Typ. (μA)	I_R @T_A= 175°C Typ. (μA)	I_FSM (A)	Q_C Typ (nC)
Part Number	Package	V_RRM (V)	I_F (A)	Typ. (V)	Max. (V)	I_R @T_A= 25°C Typ. (μA)	I_R @T_A= 175°C Typ. (μA)	I_FSM (A)	Q_C Typ (nC)
TSCDF06065G1	ITO-220AC-2L	650	6	1.32	1.45	0.37	5.32	44	20.8
TSCDF08065G1			8	1.35		0.61	5.5	72	27.12
TSCDF10065G1			10	1.34		0.8	5.42	84	31.7
TSCDF12065G1			12	1.36		0.75	10.1	88	37.16
TSCDF16065G1			16	1.38		0.87	9.6	100	49.03
TSCDF20065G1			20	1.38		1.37	11.3	128	65.57
TSCDT06065G1	TO-220AC-2L		6	1.32		0.37	5.32	44	20.8
TSCDT08065G1			8	1.35		0.61	5.5	72	27.12
TSCDT10065G1			10	1.34		0.8	5.42	84	31.7
TSCDT12065G1			12	1.36		0.75	10.1	88	37.16
TSCDT16065G1			16	1.38		0.87	9.6	100	49.03
TSCDT20065G1			20	1.38		1.37	11.3	128	65.57
TSCDH16065G1	TO-247-3L		16	1.33		0.61	9.08	68	29.18
TSCDH20065G1			20	1.34		0.63	5.5	88	35.39
TSCDH30065G1			30	1.36		0.96	9.61	128	54.36
TSCDH40065G1			40	1.33		0.8	18.78	140	64.85

News	Newsletter_7_2024_SiC Schottky 650V

The post Wide-bandgap SiC 650V Schottky Barrier Diodes Improve Efficiency in High-Power Systems first appeared on Taiwan Semiconductor.

Automotive Bi-directional ESD Protection Diode

claire.chen — Wed, 08 May 2024 09:01:36 +0000

The TESDA24VB30P2CX is Bidirectional ESD rated clamping cell to protect power interfaces, control line, or low speed data line in an electronic system. The capacitance Cd has to be smaller than 100 pF to maintain signal integrity at the maximum data rate of 20 kbit/s. To minimize the total impact of the diode on the system Cd should be smaller than 30 pF. It has been specifically designed to protect sensitive electronic components that are connected to power and control lines from over-voltage damage by Electrostatic Discharging (ESD), and Lightning.

Key Features

AEC-Q101 qualified
ESD protect for 2 line with bidirectional
Provide ESD protection for each channel to IEC61000-4-2 (ESD): ±30kV (air), ±30kV(contact) IEC61000-4-5 (Lightning): 5A (8/20μs)
Suitable for 24V and below operating voltage
Protect I/O line or power line.

Package and Circuit diagram

Typical application: ESD protection of two automotive CAN bus lines

Product Portfolio

Part number	V_WM	C_J max	ESD robustness (IEC61000-4-2)	IPPM (at tp= 8/20μs)
TESDA24VB30P2CX	24V	30pF	30KV	5A

News	Newsletter_6_2024_Automotive Bi-directional ESD Protection Diode

The post Automotive Bi-directional ESD Protection Diode first appeared on Taiwan Semiconductor.

500mW, Low IZT 1.8V-39V Surface Mount Zeners

claire.chen — Tue, 07 May 2024 07:11:55 +0000

Taiwan Semiconductor has launched a family of low-bias current Zener diodes. These 50 µA IZT Zener diodes feature popular industry standard SOD-123 packages.
These efficient diodes are specified at low bias current (50 μA), suitable for low-bias, energy harvesting and portable battery-powered devices in industrial applications. This reduces losses and increases battery life.

Key Features

Specified at a low-test current (50 μA)
Tolerance approximately: ± 5 %
Wide working voltage range VZ: 1.8 V to 39 V
Packages: SOD-123

Applications

General-purpose Zener drop in upgrade
Low-current general regulation functions
Portable applications
Industrial devices
Lighting systems
Energy harvesting

Product Portfolio

Part number	Marking code	Zener Voltage V_Z@I_ZT(V)			Test Current I_ZT(μA)	Leakage Current I_R@V_R
Part number	Marking code	Min	Nom	Max	Test Current I_ZT(μA)	μA	V
MMSZ4678	CC	1.71	1.8	1.89	50	7.5	1
MMSZ4679	CD	1.9	2	2.1	50	5	1
MMSZ4680	CE	2.09	2.2	2.31	50	4	1
MMSZ4681	CF	2.28	2.4	2.52	50	2	1
MMSZ4682	CH	2.565	2.7	2.835	50	1	1
MMSZ4683	CJ	2.85	3	3.15	50	0.8	1
MMSZ4684	CK	3.135	3.3	3.465	50	7.5	1.5
MMSZ4685	CM	3.42	3.6	3.78	50	7.5	2
MMSZ4686	CN	3.705	3.9	4.095	50	5	2
MMSZ4687	CP	4.085	4.3	4.515	50	4	2
MMSZ4688	CT	4.465	4.7	4.935	50	10	3
MMSZ4689	CU	4.845	5.1	5.355	50	10	3
MMSZ4690	CV	5.32	5.6	5.88	50	10	4
MMSZ4691	CA	5.89	6.2	6.51	50	10	5
MMSZ4692	CX	6.46	6.8	7.14	50	10	5.1
MMSZ4693	CY	7.125	7.5	7.875	50	10	5.7
MMSZ4694	CZ	7.79	8.2	8.61	50	1	6.2
MMSZ4695	DC	8.265	8.7	9.135	50	1	6.6
MMSZ4696	DD	8.645	9.1	9.555	50	1	6.9
MMSZ4697	DE	9.5	10	10.5	50	1	7.6
MMSZ4698	DF	10.45	11	11.55	50	1	8.4
MMSZ4699	DH	11.4	12	12.6	50	1	9.1
MMSZ4700	DJ	12.35	13	13.65	50	1	9.8
MMSZ4701	DK	13.3	14	14.7	50	1	10.6
MMSZ4702	DM	14.25	15	15.75	50	1	11.4
MMSZ4703	DN	15.2	16	16.8	50	1	12.1
MMSZ4704	DP	16.15	17	17.85	50	1	12.9
MMSZ4705	DT	17.1	18	18.9	50	1	13.6
MMSZ4706	DU	18.05	19	19.95	50	1	14.4
MMSZ4707	DV	19	20	21	50	0.01	15.2
MMSZ4708	DA	20.9	22	23.1	50	0.01	16.7
MMSZ4709	DX	22.8	24	25.2	50	0.01	18.2
MMSZ4710	DY	23.75	25	26.25	50	0.01	19
MMSZ4711	EA	25.65	27	28.35	50	0.01	20.4
MMSZ4712	EC	26.6	28	29.4	50	0.01	21.2
MMSZ4713	ED	28.5	30	31.5	50	0.01	22.8
MMSZ4714	EE	31.35	33	34.65	50	0.01	25
MMSZ4715	EF	34.2	36	37.8	50	0.01	27.3
MMSZ4716	EH	37.05	39	40.95	50	0.01	29.6

News	Newsletter_5_2024_500mW, Low IZT 1.8V-39V Surface Mount Zeners

The post 500mW, Low IZT 1.8V-39V Surface Mount Zeners first appeared on Taiwan Semiconductor.

TSL9A12 200mA, 6V, Nanopower IQ 600nA Low-Dropout Linear Regulator with Enable

claire.chen — Fri, 19 Apr 2024 07:22:58 +0000

The TSL9A12 series are ultra-low quiescent current regulator features low dropout voltage and low current in the standby mode with 600nA quiescent current at no load. The TSL9A12 series is ideally suited for standby micro-control-unit systems, especially for always-on applications like portable, and other battery-operated systems. The TSL9A12 series retains all the features that are common to low dropout regulators including a low dropout PMOS pass device, short circuit protection and thermal shutdown.

Key Features

Input voltage up to 6V
Fixed output voltages 1.8V and 3.3V
Ultra-low quiescent current 600nA (typ.)
Output voltage accuracy ±2%
Dropout voltage 400mV @ I_O: 200mA (V_OUT=3.3V)
Stable with 1μF ceramic capacitors
Current limit protection
Over temperature protection
RoHS Compliant
Halogen-Free

Applications

Portable battery powered equipment
Low power microcontrollers
Wireless communication equipment

Typical Application Circuit

Product Portfolio

Part Number	Package	V_IN Max. (V)	V_OUT (V)	I_OUT (mA)	I_Q Typ. (μA)	I_Q Max. (μA)	V_DROP Max. (mV)	Enable
TSL9A12V18CX	SOT-23	6	1.8	200	0.6	1.2	670 @200mA	No
TSL9A12V18CX5	SOT-25							Yes
TSL9A12V33CX	SOT-23	6	3.3	200	0.6	1.2	575 @200mA	No
TSL9A12V33CX5	SOT-25							Yes

Ordering Information

Ordering Part Number	Package	Reel (pcs)	Reel Size (inch)	Inner Box (pcs)	Carton (pcs)	Carton Size (mm)	Gross Weight (kg/ carton)
TSL9A12V18CX RFG	SOT-23	3,000	7	12,000	144,000	390 * 290 * 400	8.24
TSL9A12V18CX5 RFG	SOT-25
TSL9A12V33CX RFG	SOT-23
TSL9A12V33CX5 RFG	SOT-25

News	Newsletter_4_2024_LDO TSL9A12 SERIES

The post TSL9A12 200mA, 6V, Nanopower IQ 600nA Low-Dropout Linear Regulator with Enable first appeared on Taiwan Semiconductor.

Automotive Small-signal MOSFET

claire.chen — Thu, 11 Apr 2024 06:11:49 +0000

Key Features

AEC-Q101 qualified
Manufactured in IATF 16949 certified facilities
Advanced trench cell design
ESD protected (HBM >2kV)
Moisture sensitivity level: level 1, per J-STD-020
RoHS Compliant
Halogen-free

Applications

General purpose switching circuits
High-speed line drivers
Low-side load switches
Relay driver
ADAS system
In Vehicle Infotainment
Drop-in replacement for industry standard commercial versions

Product Portfolio

Part Number	Package	Type	Config	ESD	BV_DS (V)	V_GS (V)	I_D (mA)	V_GS(TH) (V)	R_DS(ON) typ (Ω) @10V_GS	R_DS(ON) typ (Ω) @4.5V_GS
TQM2N7002KCX	SOT-23	N-MOS	Single	≧ 2KV	60	±20	370	0.8 ~ 2.5	1.2	1.5
TQM2N7002KCU	SOT-323		Single	≧ 2KV	60	±20	320	0.8 ~ 2.5	1.2	1.5
TQM2N7002KDCU6	SOT-363		Dual	≧ 2KV	60	±20	330	0.8 ~ 2.5	1.2	1.5
TQM138KCX	SOT-23		Single	≧ 2KV	60	±20	360	0.5 ~ 1.5	1.2	1.3
TQM138KCU	SOT-323		Single	≧ 2KV	60	±20	310	0.5 ~ 1.5	1.2	1.3
TQM138KDCU6	SOT-363		Dual	≧ 2KV	60	±20	320	0.5 ~ 1.5	1.2	1.3
TQM123KCX	SOT-23		Single	≧ 2KV	100	±20	170	1.5 ~ 2.5	3.5	4.3
TQM84KCX	SOT-23	P-MOS	Single	≧ 2KV	-60	±20	-190	-0.8 ~ -2.5	1.9	2.3
TQM84KCU	SOT-323		Single	≧ 2KV	-60	±20	-160	-0.8 ~ -2.5	1.9	2.3
TQM84KDCU6	SOT-363		Dual	≧ 2KV	-60	±20	-170	-0.8 ~ -2.5	1.9	2.3

Ordering Information

Ordering Part Number	Package	Reel (pcs)	Reel Size (inch)	Inner Box (pcs)	Carton (pcs)	Carton Size (mm)	Gross Weight (kg/ carton)
TQM2N7002KCX RFG	SOT-23	3,000	7	18,000	108,000	85 * 270 * 217	3.95
TQM2N7002KCU RFG	SOT-323
TQM2N7002KDCU6 RFG	SOT-363
TQM138KCX RFG	SOT-23
TQM138KCU RFG	SOT-323
TQM138KDCU6 RFG	SOT-363
TQM123KCX RFG	SOT-23
TQM84KCX RFG	SOT-23
TQM84KCU RFG	SOT-323
TQM84KDCU6 RFG	SOT-363

News	Newsletter_3_2024_Automotive Small-signal MOSFET

The post Automotive Small-signal MOSFET first appeared on Taiwan Semiconductor.

Automotive qualified, TJ 175°C 100V & 120V Trench Schottky Surface Mount Rectifier

claire.chen — Wed, 10 Apr 2024 05:00:28 +0000

Key Features

AEC-Q101 qualified
Max. junction temperature 175°C
Low power loss, high efficiency
MSL 1
RoHS Compliant
Halogen-Free

Applications

Switching Mode Power Supply (SMPS)
Adapters
Lighting application
Low-voltage DC-DC converter

Product Portfolio

Part Number	Package	V_RRM (V)	I_F (A)	V_F @ T_A= 25°C		I_R @T_A= 25°C max. (μA)	I_R @T_A= 175°C max. (μA)	I_FSM @ 8.3ms (A)	Q_C Typ (nC)
Part Number	Package	V_RRM (V)	I_F (A)	Typ. (V)	Max. (V)	I_R @T_A= 25°C max. (μA)	I_R @T_A= 175°C max. (μA)	I_FSM @ 8.3ms (A)	Q_C Typ (nC)
TSUP8H100H	TO-277A (SMPC4.6U)	100	8	0.71	0.75	50	10	240	583
TSUP10H100H			10	0.71	0.75	50	10	320	732
TSUP12H100H			12	0.7	0.75	50	10	360	883
TSUP15H100H			15	0.72	0.75	50	10	400	1014
TSUP8H120H		120	8	0.73	0.76	50	10	240	462
TSUP10H120H			10	0.73	0.76	50	10	320	615
TSUP12H120H			12	0.72	0.76	50	10	360	744
TSUP15H120H			15	0.72	0.76	50	10	400	832

Ordering Information

Ordering Part Number	Package	Reel (pcs)	Reel Size (inch)	Inner Box (pcs)	Carton (pcs)	Carton Size (mm)	Gross Weight (kg/ carton)
TSUP8H100H	TO-277A (SMPC4.6U)	6,000	13	12,000	60,000	390 * 356 * 230	13.11
TSUP10H100H
TSUP12H100H
TSUP15H100H
TSUP8H120H
TSUP10H120H
TSUP12H120H
TSUP15H120H

News	Newsletter_2_2024_Automotive, Tj 175C 100V & 120V SMPC4.6U Trench Schottky

The post Automotive qualified, TJ 175°C 100V & 120V Trench Schottky Surface Mount Rectifier first appeared on Taiwan Semiconductor.

Integrated AMR for Cylinder Position Detection

claire.chen — Fri, 19 Jan 2024 01:00:42 +0000

Description

The TSHA2101 is produced with SIP (System in Package) technology, which builds AMR sensor & ASIC in one IC. It supports both 2-wire & 3-wire applications for cylinder position detection.

The TSHA2101 is an AMR (Anisotropic Magneto Resistance) based magnetic sensor, when combined with a magnet, it becomes a non-contact switch with low power consumption, high sensitivity and high reliability device. A horizontal magnetic field parallel to the electrode of the package can be detected by an arbitrary polarity.

TSHA2101 can be used in both pull-up load and pull-down load applications.

Key Features

Omni-polar
Supply voltage range 3.3V to 30V
Operating frequency ≥4kHz
-30V Reversed power supply protection
Output over-current protection
-40°C~105°C operating temperature
Open-drain output with self-adaptation of Pull-up or Pull-down load (Equivalent loading ≤50kΩ @ 3-Wire)
Moisture sensitivity level: level 1, per J-STD-020
RoHS Compliant
Halogen-free

Applications

2-wire & 3-wire cylinder position detection
Pull-up & Pull-down load applications
Packing machine
Automation electronics equipment
Semiconductor equipment
Textile machinery
Pneumatic drill machine

Switching Function

Product Portfolio

Part Number	Package	ESD	V_CC (V)	I_CC (µA) Typ.	F (Hz) Typ.	I_OUT (mA)	B_OP (Gs) Typ.	B_RP (Gs) Typ.	B_HYST (Gs) Typ.
TSHA2101CQ	TDFN2x3-6L	4.5KV	3.3 ~ 30	60	4	500	±31	±26	4

Ordering Information

Ordering Part Number	Outline (Package)	Reel (pcs)	Reel Size (inch)	Inner Box (pcs)	Carton (pcs)	Carton Size (mm)	Gross Weight (kg/ carton)
TSHA2101CQ-L3 M3G	TDFN2x3-6L	3,000	7	12,000	144,000	403 x 387 x 293	8.6

Typical Application Circuit

News	Newsletter_1_2024_Integrated-AMR-for-Cylinder-Position-Detection

The post Integrated AMR for Cylinder Position Detection first appeared on Taiwan Semiconductor.

Product News - Taiwan Semiconductor

1200V High Efficiency Rectifier Extends High Voltage to Automotive Surface Mounted Package

Key Features

Applications

Product Portfolio

4th Generation 600V Super Junction MOSFETs

Key Features

Applications

Product Portfolio

Bi-directional ESD Protection Diode

Applications

Application diagram

Product Portfolio

Wide-bandgap SiC 650V Schottky Barrier Diodes Improve Efficiency in High-Power Systems

Key Features

Applications

Circuit Functions

Product Portfolio

Automotive Bi-directional ESD Protection Diode

Key Features

Package and Circuit diagram

Product Portfolio

500mW, Low IZT 1.8V-39V Surface Mount Zeners

Key Features

Applications

Product Portfolio

TSL9A12 200mA, 6V, Nanopower IQ 600nA Low-Dropout Linear Regulator with Enable

Key Features

Applications

Typical Application Circuit

Product Portfolio

Ordering Information

Automotive Small-signal MOSFET

Key Features

Applications

Product Portfolio

Ordering Information

Automotive qualified, TJ 175°C 100V & 120V Trench Schottky Surface Mount Rectifier

Key Features

Applications

Product Portfolio

Ordering Information

Integrated AMR for Cylinder Position Detection

Description

Key Features

Applications

Switching Function

Product Portfolio​

Ordering Information

Typical Application Circuit

Product Portfolio