Taiwan Semiconductor

1200V High Efficiency Rectifier Extends High Voltage to Automotive Surface Mounted Package

claire.chen — Tue, 05 Nov 2024 06:12:39 +0000

Taiwan Semiconductor, (TSC), a global supplier of discrete power electronics devices, LED drivers, analog ICs and ESD protection devices, announces additional 1200V High Efficiency rectifiers in industry standard packages.

The parts are targeted for bootstrap and de-saturate applications for IGBT or MOSFET gate drivers in high voltage battery systems of EVs. Additional applications include alternative energy systems, metering, lighting and rectification in HV power systems.

Key Features

Low C_J
Fast t_rr -75ns max
Environmental compliance
T_J 175℃ max.
Industry standard packages

Applications

Bootstrapping
De-saturate
Snubber – clamping
Freewheeling
HV rectification
Protection – HV blocking diode

Product Portfolio

Part Number	Package	V_RRM (V)	I_F (A)	V_F Max. (V)	t_rr Max.(ns)	I_FSM (A)	T_J Max (°C)
HS1Q	SMA	1200	1	1.9	75	35	175
HS1QH	SMA	1200	1	1.9	75	35	175
HS1QB	SMB	1200	1	1.9	75	35	175
HS1QBH	SMB	1200	1	1.9	75	35	175

The post 1200V High Efficiency Rectifier Extends High Voltage to Automotive Surface Mounted Package first appeared on Taiwan Semiconductor.

2024 electronica

kevin.lu — Wed, 18 Sep 2024 02:37:20 +0000

Taiwan Semiconductor at Electronica 2024

Taiwan Semiconductor is thrilled to be part of Electronica 2024, one of the premier events in the electronics industry. Join us from November 12nd to 15th, 2024 in Munich Germany, where professionals across the industry will gather to network, exchange insights, and explore cutting-edge innovations.

Visit our booth at Hall C3. Booth 330 to discover how Taiwan Semiconductor can help power your next electronic project. We look forward to connecting with you!

For media inquiries, please contact: munich@tsceu.com

The post 2024 electronica first appeared on Taiwan Semiconductor.

2024 electronica India

claire.chen — Thu, 08 Aug 2024 09:35:51 +0000

Taiwan Semiconductor at Electronica India 2024

Taiwan Semiconductor is excited to announce its participation in Electronica India 2024. This premier electronics industry event will take place from September 11th to 13th, 2024, in Greater Noida.

Electronica India offers a valuable platform for industry professionals to connect, share knowledge, and explore the latest trends.

We invite you to visit our booth H11.J51 to learn more about how Taiwan Semiconductor can support your electronic projects.

For media inquiries, please contact: sales@tscind.in

The post 2024 electronica India first appeared on Taiwan Semiconductor.

2024 electronica China

Carol Chang — Tue, 18 Jun 2024 05:52:59 +0000

Munich Shanghai Electronica Fair to be held at Shanghai New International Expo Center from July 8-10, 2024

The fair will focus on the annual trends of the electronics industry this year, covering trendy application fields such as new energy vehicles, energy storage, intelligent driving, satellite communication, robots, wearables, smart buildings, edge intelligence, smart power, third-generation semiconductors, etc., and gathering high-quality electronics companies from across the globe to create a professional exhibition platform spanning the upstream and downstream of the industry from product design to application landing. Get a glimpse into the future of electronics with exhibits on the latest trends and hottest topics. Welcome to visit our booth E3.3700!

The post 2024 electronica China first appeared on Taiwan Semiconductor.

4th Generation 600V Super Junction MOSFETs

claire.chen — Mon, 03 Jun 2024 06:27:21 +0000

Taiwan Semiconductor introduces the 4^th generation 600V NE series super junction MOSFETs which are designed to improve efficiency and power density in high voltage applications. The latest technology of the NE super junction MOSFET enables exceptionally low on-state resistance (Ron) and low gate charge capacitance (Qg). The achievement of 30% FOM (figure-of-merit; Ron * Qg) improvement results in higher value in many HV applications vs alternative options.

Key Features

4^th Generation Super Junction technology
Low gate charge capacitance
Excellent switching performance
High gate noise immunity

Applications

Off-line switching power conversion
Server power supplies
HV motor drivers
UPS systems
Lighting controls

Product Portfolio

Part Number	Package	BV_DSS (V)	R_DS(ON) max (mΩ)	ID (A)	V_GS(TH) (V)	T_J max (°C)
TSM60NE069CIT	ITO-220TL	600	69	26	4 ~ 6	150
TSM60NE084CIT		600	84	22	4 ~ 6	150
TSM60NE110CIT		600	110	19	4 ~ 6	150
TSM60NE145CIT		600	145	14	4 ~ 6	150
TSM60NE180CIT		600	180	13	4 ~ 6	150
TSM60NE200CIT		600	200	12	4 ~ 6	150
TSM60NE285CIT		600	285	7.1	4 ~ 6	150
TSM60NE048PW	TO-247-3L	600	48	64	4 ~ 6	150
TSM60NE069PW		600	69	46	4 ~ 6	150
TSM60NE084PW		600	84	41	4 ~ 6	150
TSM60NE285CH	TO-251	600	285	11	4 ~ 6	150
TSM60NE285CP	TO-252	600	285	11	4 ~ 6	150

News	Newsletter_9_2024_4th Generation 600V Super Junction MOSFETs

The post 4th Generation 600V Super Junction MOSFETs first appeared on Taiwan Semiconductor.

Bi-directional ESD Protection Diode

claire.chen — Thu, 16 May 2024 03:53:03 +0000

TESDL24VB17P1Q1 is a unique design with proprietary clamping cells in a small package. The DFN1006 package size is 1.0 mm x 0.6 mm and the thickness is only 0.5 mm, which can meet the needs of new products for small packages. During transient conditions, the proprietary clamping cells prevent over-voltage on the control/data/power lines, protecting any downstream components.

Applications

Battery contacts
Power management system
Portable devices
Digital cameras
Digital frames
Cellular handsets and accessories
Notebooks, desktops and servers
Microprocessor-based equipment

Application diagram

Product Portfolio

Part Number	V_WM	C_J max	ESD robustness (IEC61000-4-2)	IPPM (at tp= 8/20μs)
TESDL24VB17P1Q1	24V	30pF	30KV	5A

News	Newsletter_8_2024_Bi-directional ESD Protection Diode

The post Bi-directional ESD Protection Diode first appeared on Taiwan Semiconductor.

Wide-bandgap SiC 650V Schottky Barrier Diodes Improve Efficiency in High-Power Systems

claire.chen — Wed, 15 May 2024 07:59:03 +0000

This family of 650V silicon carbide Schottky barrier diode is suitable for high-efficiency AC-DC, DC-DC and DC-AC conversion applications. Unlike silicon-based fast-recovery rectifiers, these SiC devices have negligible switching losses due to low capacitive charge (QC). This makes them suitable for high-speed switching applications, benefitting circuit designs with increased power density and can reduce overall solution size.

Key Features

Max. junction temperature 175°C
High-speed switching
High frequency operation
Positive temperature coefficient on V_F
SPICE Models available
Thermal Models available

Applications

AD-DC conversion – PFC Boost
DC-DC, Solar inverters
Data center and server power
Telecom – Datacom power
UPS systems

Circuit Functions

PFC boost diode
Free-wheeling diode
Full wave bridge
Vienna bridgeless circuit

Product Portfolio

Part Number	Package	V_RRM (V)	I_F (A)	V_F @ T_A= 25°C		I_R @T_A= 25°C Typ. (μA)	I_R @T_A= 175°C Typ. (μA)	I_FSM (A)	Q_C Typ (nC)
Part Number	Package	V_RRM (V)	I_F (A)	Typ. (V)	Max. (V)	I_R @T_A= 25°C Typ. (μA)	I_R @T_A= 175°C Typ. (μA)	I_FSM (A)	Q_C Typ (nC)
TSCDF06065G1	ITO-220AC-2L	650	6	1.32	1.45	0.37	5.32	44	20.8
TSCDF08065G1			8	1.35		0.61	5.5	72	27.12
TSCDF10065G1			10	1.34		0.8	5.42	84	31.7
TSCDF12065G1			12	1.36		0.75	10.1	88	37.16
TSCDF16065G1			16	1.38		0.87	9.6	100	49.03
TSCDF20065G1			20	1.38		1.37	11.3	128	65.57
TSCDT06065G1	TO-220AC-2L		6	1.32		0.37	5.32	44	20.8
TSCDT08065G1			8	1.35		0.61	5.5	72	27.12
TSCDT10065G1			10	1.34		0.8	5.42	84	31.7
TSCDT12065G1			12	1.36		0.75	10.1	88	37.16
TSCDT16065G1			16	1.38		0.87	9.6	100	49.03
TSCDT20065G1			20	1.38		1.37	11.3	128	65.57
TSCDH16065G1	TO-247-3L		16	1.33		0.61	9.08	68	29.18
TSCDH20065G1			20	1.34		0.63	5.5	88	35.39
TSCDH30065G1			30	1.36		0.96	9.61	128	54.36
TSCDH40065G1			40	1.33		0.8	18.78	140	64.85

News	Newsletter_7_2024_SiC Schottky 650V

The post Wide-bandgap SiC 650V Schottky Barrier Diodes Improve Efficiency in High-Power Systems first appeared on Taiwan Semiconductor.

TSC Officially Joins “2024 TALENT, in Taiwan” Alliance

cindy.hsieh — Tue, 14 May 2024 01:00:34 +0000

Taiwan Semiconductor Co., Ltd. believes that sustainable talent development is crucial for organizations to achieve long-term success. Continuously strengthening organizational adaptability to change and maintaining market competitiveness are vital missions for TSC. In 2024, marking our 45th anniversary and to continue nurturing and developing talent in response to global ESG trends and Diversity, Equity, and Inclusion (DEI), TSC announces its official participation in the “2024 TALENT, in Taiwan” Alliance initiated by CommonWealth Magazine Group. TSC joins hands with over 400 leading companies in Taiwan to jointly promote sustainable talent development.

TSC is committed to advancing sustainable talent actions across various dimensions, implementing indicators such as Diversity and Inclusion, Physical and Mental Health, Cultivation and Growth, Communication and Experience, to enhance talent sustainability competitiveness:

Diversity and Inclusion:

TSC is dedicated to establishing a diverse, equitable, and inclusive workplace, respecting the uniqueness and differences of all employees. To achieve this goal, we not only employ local talent but also embrace international talent. With a global presence, we provide various employment opportunities through diverse and inclusive recruitment policies, both online and offline. Currently, TSC has over 1,400 employees worldwide.

Physical and Mental Health:

Employee welfare and physical and mental health are key elements of sustainable operations. We continuously care for employee health management through various welfare programs, flexible policies, and superior health check systems beyond legal requirements, promoting work-life balance and creating a healthy and supportive workplace environment.

Cultivation and Growth:

Through various education and training programs tailored to the needs of different positions, TSC cultivates required abilities and offers diverse courses. Utilizing diverse education and training channels, interactive learning methods such as team activities, group discussions, and applications are incorporated to ensure practical learning and mutual growth, establishing a comprehensive talent database.

Communication and Experience:

We value employee relationships and establish diverse, two-way, and open communication channels, including the intranet, physical bulletin boards, mailboxes, complaint hotlines/email, labor-management meetings, etc., respecting and valuing every employee’s opinions and feedback.

TSC commits to continue actively cultivating talent and creating a happy and friendly workplace through various sustainable actions.

Join TSC: https://www.taiwansemi.com/zh_tw/careers/

Event Details: “2024 TALENT, in Taiwan” Alliance

#talent_in_taiwan #人才永續

The post TSC Officially Joins “2024 TALENT, in Taiwan” Alliance first appeared on Taiwan Semiconductor.

Automotive Bi-directional ESD Protection Diode

claire.chen — Wed, 08 May 2024 09:01:36 +0000

The TESDA24VB30P2CX is Bidirectional ESD rated clamping cell to protect power interfaces, control line, or low speed data line in an electronic system. The capacitance Cd has to be smaller than 100 pF to maintain signal integrity at the maximum data rate of 20 kbit/s. To minimize the total impact of the diode on the system Cd should be smaller than 30 pF. It has been specifically designed to protect sensitive electronic components that are connected to power and control lines from over-voltage damage by Electrostatic Discharging (ESD), and Lightning.

Key Features

AEC-Q101 qualified
ESD protect for 2 line with bidirectional
Provide ESD protection for each channel to IEC61000-4-2 (ESD): ±30kV (air), ±30kV(contact) IEC61000-4-5 (Lightning): 5A (8/20μs)
Suitable for 24V and below operating voltage
Protect I/O line or power line.

Package and Circuit diagram

Typical application: ESD protection of two automotive CAN bus lines

Product Portfolio

Part number	V_WM	C_J max	ESD robustness (IEC61000-4-2)	IPPM (at tp= 8/20μs)
TESDA24VB30P2CX	24V	30pF	30KV	5A

News	Newsletter_6_2024_Automotive Bi-directional ESD Protection Diode

The post Automotive Bi-directional ESD Protection Diode first appeared on Taiwan Semiconductor.

500mW, Low IZT 1.8V-39V Surface Mount Zeners

claire.chen — Tue, 07 May 2024 07:11:55 +0000

Taiwan Semiconductor has launched a family of low-bias current Zener diodes. These 50 µA IZT Zener diodes feature popular industry standard SOD-123 packages.
These efficient diodes are specified at low bias current (50 μA), suitable for low-bias, energy harvesting and portable battery-powered devices in industrial applications. This reduces losses and increases battery life.

Key Features

Specified at a low-test current (50 μA)
Tolerance approximately: ± 5 %
Wide working voltage range VZ: 1.8 V to 39 V
Packages: SOD-123

Applications

General-purpose Zener drop in upgrade
Low-current general regulation functions
Portable applications
Industrial devices
Lighting systems
Energy harvesting

Product Portfolio

Part number	Marking code	Zener Voltage V_Z@I_ZT(V)			Test Current I_ZT(μA)	Leakage Current I_R@V_R
Part number	Marking code	Min	Nom	Max	Test Current I_ZT(μA)	μA	V
MMSZ4678	CC	1.71	1.8	1.89	50	7.5	1
MMSZ4679	CD	1.9	2	2.1	50	5	1
MMSZ4680	CE	2.09	2.2	2.31	50	4	1
MMSZ4681	CF	2.28	2.4	2.52	50	2	1
MMSZ4682	CH	2.565	2.7	2.835	50	1	1
MMSZ4683	CJ	2.85	3	3.15	50	0.8	1
MMSZ4684	CK	3.135	3.3	3.465	50	7.5	1.5
MMSZ4685	CM	3.42	3.6	3.78	50	7.5	2
MMSZ4686	CN	3.705	3.9	4.095	50	5	2
MMSZ4687	CP	4.085	4.3	4.515	50	4	2
MMSZ4688	CT	4.465	4.7	4.935	50	10	3
MMSZ4689	CU	4.845	5.1	5.355	50	10	3
MMSZ4690	CV	5.32	5.6	5.88	50	10	4
MMSZ4691	CA	5.89	6.2	6.51	50	10	5
MMSZ4692	CX	6.46	6.8	7.14	50	10	5.1
MMSZ4693	CY	7.125	7.5	7.875	50	10	5.7
MMSZ4694	CZ	7.79	8.2	8.61	50	1	6.2
MMSZ4695	DC	8.265	8.7	9.135	50	1	6.6
MMSZ4696	DD	8.645	9.1	9.555	50	1	6.9
MMSZ4697	DE	9.5	10	10.5	50	1	7.6
MMSZ4698	DF	10.45	11	11.55	50	1	8.4
MMSZ4699	DH	11.4	12	12.6	50	1	9.1
MMSZ4700	DJ	12.35	13	13.65	50	1	9.8
MMSZ4701	DK	13.3	14	14.7	50	1	10.6
MMSZ4702	DM	14.25	15	15.75	50	1	11.4
MMSZ4703	DN	15.2	16	16.8	50	1	12.1
MMSZ4704	DP	16.15	17	17.85	50	1	12.9
MMSZ4705	DT	17.1	18	18.9	50	1	13.6
MMSZ4706	DU	18.05	19	19.95	50	1	14.4
MMSZ4707	DV	19	20	21	50	0.01	15.2
MMSZ4708	DA	20.9	22	23.1	50	0.01	16.7
MMSZ4709	DX	22.8	24	25.2	50	0.01	18.2
MMSZ4710	DY	23.75	25	26.25	50	0.01	19
MMSZ4711	EA	25.65	27	28.35	50	0.01	20.4
MMSZ4712	EC	26.6	28	29.4	50	0.01	21.2
MMSZ4713	ED	28.5	30	31.5	50	0.01	22.8
MMSZ4714	EE	31.35	33	34.65	50	0.01	25
MMSZ4715	EF	34.2	36	37.8	50	0.01	27.3
MMSZ4716	EH	37.05	39	40.95	50	0.01	29.6

News	Newsletter_5_2024_500mW, Low IZT 1.8V-39V Surface Mount Zeners

The post 500mW, Low IZT 1.8V-39V Surface Mount Zeners first appeared on Taiwan Semiconductor.