{"id":14015,"date":"2024-05-15T15:59:03","date_gmt":"2024-05-15T07:59:03","guid":{"rendered":"https:\/\/web.ts.com.tw\/ja\/?p=14015"},"modified":"2024-05-15T17:27:33","modified_gmt":"2024-05-15T09:27:33","slug":"wide-bandgap-sic-650v-schottky-barrier-diodes-improve-efficiency-in-high-power-systems","status":"publish","type":"post","link":"http:\/\/www.taiwansemi.com\/ja\/wide-bandgap-sic-650v-schottky-barrier-diodes-improve-efficiency-in-high-power-systems\/","title":{"rendered":"Wide-bandgap SiC 650V Schottky Barrier Diodes Improve Efficiency in High-Power Systems"},"content":{"rendered":"\t\t
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This family of 650V silicon carbide Schottky barrier diode is suitable for high-efficiency AC-DC, DC-DC and DC-AC conversion applications. Unlike silicon-based fast-recovery rectifiers, these SiC devices have negligible switching losses due to low capacitive charge (QC). This makes them suitable for high-speed switching applications, benefitting circuit designs with increased power density and can reduce overall solution size.<\/p>\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t

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Key Features<\/h2>\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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