Wide Bandgap (WBG) devices have recently garnered more attention as a promising alternative to Si devices. Over the past several years, high-rated GaN (Gallium Nitride) devices have rapidly emerged and been applied in various power electronics applications, such as cell phone chargers, smart home applications, data-center power, high-efficiency switching power supplies, and the renewable energy market.

TSC offering a 650V E-HEMT (Enhancement-mode High Electron Mobility Transistors) GaN product that has high-performance transistor technology for power conversion. The achievement of reduction parasitic capacitance, and speed gate charge compared to our silicon MOSFET technology. This initial 650V E-HEMT GaN includes high transient voltage while rugged switching applications. It collocates An easy-to-implement GaN driver circuit that consists of four components for level conversion in a traditional Si MOSFET driver circuit. This simple circuit enables the 12V level shift to ±6V of driver GaN and is adjustable to any power level, any frequency with single, dual, or high-side and low-side topologies with any standard controller or driver.